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陈小姐 
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VNA-25+ High Directivity Monolithic Amplifier
Product Features
• 3V & 5V operation
• no external biasing circuit required
• internal DC blocking at RF input and output
• high directivity, 20 dB typ.
• wide bandwidth, 0.5 to 2.5 GHz
• low noise figure, 5.5 dB typ.
• output power, up to +18.2 dBm typ.
• low cost Typical
Applications
• buffer amplifier
• cellular
• PCN Pin
General Description
VNA-25+ is a wideband amplifier offering high dynamic range. It has repeatable performance from lot to lot. It is enclosed in an 8-lead SOIC package. VNA-25+ is fabricated using GaAs MESFET technology. Expected MTBF at 85°C case temperature is 40,000 years at 2.8V, 2,000 at 5V.
